Tin nanowire field effect transistor

Lida Ansari; Giorgos Fagas; James C. Greer

doi:10.1109/ESSDERC.2012.6343391

Tin nanowire field effect transistor

Lida Ansari, Giorgos Fagas, James C. Greer

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Semimetal tin nanowires of sufficiently small diameters become semiconductors. Bandgap engineering based on this effect allows for the design of a confinement modulated gap field-effect transistor in which the need for doping in the source, channel or drain is eliminated. Functionality of a dopant-free, single-material field effect transistor is demonstrated through ab initio simulations. Drain-source current-voltage characteristic of the confinement modulated gap transistor shows that the subthreshold slope and the on/off ratio are 73 mV/dec and up to 10⁴ at V_DD=400 mV, respectively.

Original language	English
Title of host publication	2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages	294-297
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2012.6343391
Publication status	Published - 2012
Externally published	Yes
Event	42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 17 Sept 2012 → 21 Sept 2012

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	42nd European Solid-State Device Research Conference, ESSDERC 2012
Country/Territory	France
City	Bordeaux
Period	17/09/12 → 21/09/12

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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10.1109/ESSDERC.2012.6343391

Cite this

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title = "Tin nanowire field effect transistor",

abstract = "Semimetal tin nanowires of sufficiently small diameters become semiconductors. Bandgap engineering based on this effect allows for the design of a confinement modulated gap field-effect transistor in which the need for doping in the source, channel or drain is eliminated. Functionality of a dopant-free, single-material field effect transistor is demonstrated through ab initio simulations. Drain-source current-voltage characteristic of the confinement modulated gap transistor shows that the subthreshold slope and the on/off ratio are 73 mV/dec and up to 104 at VDD=400 mV, respectively.",

author = "Lida Ansari and Giorgos Fagas and Greer, {James C.}",

year = "2012",

doi = "10.1109/ESSDERC.2012.6343391",

language = "English",

isbn = "9781467317078",

series = "European Solid-State Device Research Conference",

pages = "294--297",

booktitle = "2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012",

}

Ansari, L, Fagas, G & Greer, JC 2012, Tin nanowire field effect transistor. in 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012., 6343391, European Solid-State Device Research Conference, pp. 294-297, 42nd European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, 17/09/12. https://doi.org/10.1109/ESSDERC.2012.6343391

TY - GEN

T1 - Tin nanowire field effect transistor

AU - Ansari, Lida

AU - Fagas, Giorgos

AU - Greer, James C.

PY - 2012

Y1 - 2012

N2 - Semimetal tin nanowires of sufficiently small diameters become semiconductors. Bandgap engineering based on this effect allows for the design of a confinement modulated gap field-effect transistor in which the need for doping in the source, channel or drain is eliminated. Functionality of a dopant-free, single-material field effect transistor is demonstrated through ab initio simulations. Drain-source current-voltage characteristic of the confinement modulated gap transistor shows that the subthreshold slope and the on/off ratio are 73 mV/dec and up to 104 at VDD=400 mV, respectively.

AB - Semimetal tin nanowires of sufficiently small diameters become semiconductors. Bandgap engineering based on this effect allows for the design of a confinement modulated gap field-effect transistor in which the need for doping in the source, channel or drain is eliminated. Functionality of a dopant-free, single-material field effect transistor is demonstrated through ab initio simulations. Drain-source current-voltage characteristic of the confinement modulated gap transistor shows that the subthreshold slope and the on/off ratio are 73 mV/dec and up to 104 at VDD=400 mV, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84870605787&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2012.6343391

DO - 10.1109/ESSDERC.2012.6343391

M3 - Conference contribution

AN - SCOPUS:84870605787

SN - 9781467317078

T3 - European Solid-State Device Research Conference

SP - 294

EP - 297

BT - 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012

T2 - 42nd European Solid-State Device Research Conference, ESSDERC 2012

Y2 - 17 September 2012 through 21 September 2012

ER -

Tin nanowire field effect transistor

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