Skip to main navigation
Skip to search
Skip to main content
University of Nottingham Ningbo China Home
Home
Profiles
Research units
Research output
Projects
Prizes
Activities
Impacts
Student theses
Search by expertise, name or affiliation
Hong Lu
PhD
,
Department of Chemical and Environmental Engineering
Email
HONG.LU
NOTTINGHAM.EDU
CN
h-index
54
Citations
4
h-index
Calculated based on number of publications stored in Pure and citations from Scopus
2021
2023
Research activity per year
Overview
Fingerprint
Network
Research output
(7)
Similar Profiles
(1)
Fingerprint
Dive into the research topics where Hong Lu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Fused Ring
20%
High Performance
20%
Terminal Group
20%
Molecular Conformation
20%
Ring Core
20%
Ternary Organic Solar Cells
20%
Atomic Layer Deposition Al2O3
20%
Organic Solar Cell Stability
20%
Non-fullerene Acceptors
20%
Al2O3 Interlayer
13%
Pyrrole Ring
13%
Organic Solar Cells
13%
Non-fullerene Electron Acceptors
11%
Reduced Recombination
6%
Inverted Architecture
6%
Short-circuit Current Density
6%
Indacenodithiophene
6%
Red-shifted Absorption
6%
VOCs
6%
D-A Type
6%
Film-forming Properties
6%
TF-ICF
6%
Photovoltaic Performance
6%
Binary Host
6%
Open-circuit Voltage
6%
BTA1
6%
Photon Harvesting
6%
Photoactive Layer Thickness
6%
Charge Transport
6%
Reduced Charge Recombination
6%
Mixed Alloys
6%
Benzotriazole
6%
Alloy Phases
6%
Ternary Strategy
6%
Exciton Dissociation
6%
Ternary Devices
6%
Ternary Blend
6%
High Efficiency
6%
Fill Factor
6%
Energy Loss
6%
Dithienopyrrolobenzothiadiazole
5%
Material Science
Organic Solar Cells
100%
Electronic Circuit
34%
Electrochemical Property
20%
Optical Property
20%
Non-Fullerene Acceptor
20%
Aluminum Oxide
20%
ZnO
20%
Film
20%
Al2O3
20%
Density
16%
Structure (Composition)
6%
Device Fabrication
6%
Surface Defect
5%
Surface Morphology
5%
Photovoltaic Performance
5%
Engineering
Aluminum Oxide
20%
Organic Solar Cells
20%
Atomic Layer Deposition
20%
Interlayer
8%
Device Performance
8%