Metal-induced gap states in passivating metal/silicon contacts

Keyphrases

• Density of States 100%
• Passivated 100%
• Metal-induced Gap States 100%
• Surface Defects 66%
• Gap States 66%
• First-principles Calculations 33%
• Density Functional Theory 33%
• Silicon Surface 33%
• Tunneling 33%
• Close Contact 33%
• Density Increase 33%
• Defect-induced 33%
• (111)-oriented 33%
• Film Thickness 33%
• Carrier Recombination 33%
• Surface Hydrogenation 33%
• Contact Resistivity 33%
• Contact Formation 33%
• Passivating Contacts 33%
• High Efficiency Solar Cell 33%

Material Science

• Density 100%
• Silicon 100%
• Surface Defect 50%
• Hydrogenation 25%
• Electrical Resistivity 25%
• Solar Cell 25%
• Film Thickness 25%