Modelling of Sb activation in ultra-shallow junction regions in bulk and strained Si

Keyphrases

• Ultra-shallow Junction 100%
• Strained Si 100%
• Bulk Si 100%
• Junction Region 100%
• Strained Silicon 66%
• Modified Model 33%
• Dopant 33%
• Annealing 33%
• Antimony 33%
• Strained Silicon Layers 33%
• Bulk Silicon 33%
• Improved Prediction 33%
• Implantation Energy 33%
• Activation Behavior 33%
• Highly Doped 33%
• Rapid Thermal Annealing 33%
• Typically Developing 33%

Engineering

• Shallow Junction 100%
• Energy Engineering 33%
• Simulation Tool 33%
• Modified Model 33%
• Dopants 33%
• Silicon Layer 33%
• Parameter Set 33%
• Active Profile 33%