@inproceedings{feade7ca2c304278915c5d9bdf1753d9,
title = "A Sub-kBT/q Dirac-source Graphene Nanoribbon Field-effect Transistor",
abstract = "A sub-kB T/q Dirac-source (DS) graphene nanoribbon FET has been studied using a coupled mode-space non-equilibrium Green function solver employing k·p electronic structures. A 13 dimer wide armchair graphene nanoribbon (13-AGNR) FET connected to a semimetallic 162-AGNR source contact is simulated to study the physics of a proposed DSFET design. Density-of-states filtering at the source contact is explored by shifting its Fermi level via variations on doping concentration. An optimized design achieves a minimum subthreshold swing (SS) of 42 mV/dec and sub-60mV/dec operation across three orders of ID magnitude.",
keywords = "Dirac source, DoS filtering, Sub-kBT/q, graphene nanoribbon, ultra-low VDD applications",
author = "E. Chen and A. Sanchez-Soares and T. Kelly and G. Fagas and Greer, {J. C.}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021 ; Conference date: 27-09-2021 Through 29-09-2021",
year = "2021",
month = sep,
day = "27",
doi = "10.1109/SISPAD54002.2021.9592541",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "98--101",
booktitle = "SISPAD 2021 - 2021 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings",
address = "United States",
}