Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials

Tanzeela Fazal; Sajid Mahmood; Bushra Ismail; Mazloom Shah; Ammar Zidan; Ali Bahadur; Shahid Iqbal; Komal Rizwan; Shahid Alam; Fayyaz Ali; Abd El Aziem Farouk; Salman Aloufi

doi:10.1002/jemt.24750

Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials

Tanzeela Fazal, Sajid Mahmood, Bushra Ismail, Mazloom Shah, Ammar Zidan, Ali Bahadur, Shahid Iqbal, Komal Rizwan, Shahid Alam, Fayyaz Ali, Abd El Aziem Farouk, Salman Aloufi

CBI Green Chemical/Energy Centre

Research output: Journal Publication › Article › peer-review

Abstract

Thin films of PbS, both undoped and cobalt-doped (Co-PbS), were produced on glass substrates using the straightforward and controllable approach of sequential ionic layer adsorption and reaction (SILAR). The reactive substances employed to deposit the PbS thin films were lead nitrate (Pb(NO₃)₂), cobalt nitrate (Co(NO₃)₂(H₂O)₆), sodium thiosulphate (Na₂S₂O₃) and H₂O for different dipping concentrations of lead and cobalt. The films were adherent to the substrate and were compact, and crack-free with a shiny silver color. The films were structurally characterized by XRD and were found well crystallized according to the face-centered cubic formation. The films were optically characterized by the UV–Vis. spectrophotometer and absorption were found stronger in the UV and UV–Vis. region and then diminishes. Band gaps were determined to be between 1.8 eV and 2.2 eV, making them significant materials with the option of band gap engineering according to the desire by manipulating the compositions.

Original language	English
Journal	Microscopy Research and Technique
DOIs	https://doi.org/10.1002/jemt.24750
Publication status	Accepted/In press - 2024

Keywords

doping
Lead sulfide
optoelectronic applications
SILAR
thin films

ASJC Scopus subject areas

Anatomy
Histology
Instrumentation
Medical Laboratory Technology

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@article{4f0a4056160b4c2b867bfa9911ea3ace,

title = "Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials",

abstract = "Thin films of PbS, both undoped and cobalt-doped (Co-PbS), were produced on glass substrates using the straightforward and controllable approach of sequential ionic layer adsorption and reaction (SILAR). The reactive substances employed to deposit the PbS thin films were lead nitrate (Pb(NO3)2), cobalt nitrate (Co(NO₃)₂(H₂O)₆), sodium thiosulphate (Na2S2O3) and H2O for different dipping concentrations of lead and cobalt. The films were adherent to the substrate and were compact, and crack-free with a shiny silver color. The films were structurally characterized by XRD and were found well crystallized according to the face-centered cubic formation. The films were optically characterized by the UV–Vis. spectrophotometer and absorption were found stronger in the UV and UV–Vis. region and then diminishes. Band gaps were determined to be between 1.8 eV and 2.2 eV, making them significant materials with the option of band gap engineering according to the desire by manipulating the compositions.",

keywords = "doping, Lead sulfide, optoelectronic applications, SILAR, thin films",

author = "Tanzeela Fazal and Sajid Mahmood and Bushra Ismail and Mazloom Shah and Ammar Zidan and Ali Bahadur and Shahid Iqbal and Komal Rizwan and Shahid Alam and Fayyaz Ali and Farouk, {Abd El Aziem} and Salman Aloufi",

note = "Publisher Copyright: {\textcopyright} 2024 Wiley Periodicals LLC.",

year = "2024",

doi = "10.1002/jemt.24750",

language = "English",

journal = "Microscopy Research and Technique",

issn = "1059-910X",

publisher = "Wiley-Liss Inc.",

}

TY - JOUR

T1 - Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials

AU - Fazal, Tanzeela

AU - Mahmood, Sajid

AU - Ismail, Bushra

AU - Shah, Mazloom

AU - Zidan, Ammar

AU - Bahadur, Ali

AU - Iqbal, Shahid

AU - Rizwan, Komal

AU - Alam, Shahid

AU - Ali, Fayyaz

AU - Farouk, Abd El Aziem

AU - Aloufi, Salman

PY - 2024

Y1 - 2024

N2 - Thin films of PbS, both undoped and cobalt-doped (Co-PbS), were produced on glass substrates using the straightforward and controllable approach of sequential ionic layer adsorption and reaction (SILAR). The reactive substances employed to deposit the PbS thin films were lead nitrate (Pb(NO3)2), cobalt nitrate (Co(NO₃)₂(H₂O)₆), sodium thiosulphate (Na2S2O3) and H2O for different dipping concentrations of lead and cobalt. The films were adherent to the substrate and were compact, and crack-free with a shiny silver color. The films were structurally characterized by XRD and were found well crystallized according to the face-centered cubic formation. The films were optically characterized by the UV–Vis. spectrophotometer and absorption were found stronger in the UV and UV–Vis. region and then diminishes. Band gaps were determined to be between 1.8 eV and 2.2 eV, making them significant materials with the option of band gap engineering according to the desire by manipulating the compositions.

AB - Thin films of PbS, both undoped and cobalt-doped (Co-PbS), were produced on glass substrates using the straightforward and controllable approach of sequential ionic layer adsorption and reaction (SILAR). The reactive substances employed to deposit the PbS thin films were lead nitrate (Pb(NO3)2), cobalt nitrate (Co(NO₃)₂(H₂O)₆), sodium thiosulphate (Na2S2O3) and H2O for different dipping concentrations of lead and cobalt. The films were adherent to the substrate and were compact, and crack-free with a shiny silver color. The films were structurally characterized by XRD and were found well crystallized according to the face-centered cubic formation. The films were optically characterized by the UV–Vis. spectrophotometer and absorption were found stronger in the UV and UV–Vis. region and then diminishes. Band gaps were determined to be between 1.8 eV and 2.2 eV, making them significant materials with the option of band gap engineering according to the desire by manipulating the compositions.

KW - doping

KW - Lead sulfide

KW - optoelectronic applications

KW - SILAR

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85211152122&partnerID=8YFLogxK

U2 - 10.1002/jemt.24750

DO - 10.1002/jemt.24750

M3 - Article

AN - SCOPUS:85211152122

SN - 1059-910X

JO - Microscopy Research and Technique

JF - Microscopy Research and Technique

ER -

Band Gap Engineering of Binary and Cobalt-Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials

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Keywords

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