Abstract
In transportation electrification, power modules are considered the best choice for power switches to build a high-power inverter. Recently, several studies have presented prototypes that use parallel discrete MOSFETs and show similar overall output capabilities. This paper aims to compare the maximum output power and losses of inverters with different types (surface-mounted, through-hole-mounted and power modules) of commercially available switching devices, and, therefore, discuss the theoretical boundaries of each technology. The numerical analysis relies on detailed power loss and thermal models, with adjustments made for gate current and realistic parameters of the cooling system. The analysis includes two case studies with different targets, including minimum dimensional characteristics and maximum output power. The results demonstrate that discrete MOSFETs can provide improved capabilities in contrast to power modules under certain conditions.
Original language | English |
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Article number | 355 |
Journal | Electronics (Switzerland) |
Volume | 13 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jan 2024 |
Keywords
- parallel MOSFETs
- silicon carbide (SiC)
- three-phase inverter
ASJC Scopus subject areas
- Control and Systems Engineering
- Signal Processing
- Hardware and Architecture
- Computer Networks and Communications
- Electrical and Electronic Engineering