Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index

Michael Prantner; Giampaolo Buticchi; Marco Liserre

doi:10.23919/EPE17ECCEEurope.2017.8099213

Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index

Michael Prantner, Giampaolo Buticchi, Marco Liserre

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter design. The results are condensed in a performance index, that allows comparing different solutions.

Original language	English
Title of host publication	2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9789075815276
DOIs	https://doi.org/10.23919/EPE17ECCEEurope.2017.8099213
Publication status	Published - 6 Nov 2017
Externally published	Yes
Event	19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe - Warsaw, Poland Duration: 11 Sept 2017 → 14 Sept 2017

Publication series

Name	2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
Volume	2017-January

Conference

Conference	19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
Country/Territory	Poland
City	Warsaw
Period	11/09/17 → 14/09/17

Keywords

Device characterisation
Efficiency
Gallium Nitride (GaN)
Silicon Carbide (SiC)
Wide bandgap devices

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering
Energy Engineering and Power Technology

Access to Document

10.23919/EPE17ECCEEurope.2017.8099213

Cite this

Prantner, M., Buticchi, G., & Liserre, M. (2017). Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index. In 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe (2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/EPE17ECCEEurope.2017.8099213

Prantner, Michael ; Buticchi, Giampaolo ; Liserre, Marco. / Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index. 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 2017. (2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe).

@inproceedings{aa57579f5c5f489a8eb3c06a6e67c5aa,

title = "Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index",

abstract = "Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter design. The results are condensed in a performance index, that allows comparing different solutions.",

keywords = "Device characterisation, Efficiency, Gallium Nitride (GaN), Silicon Carbide (SiC), Wide bandgap devices",

author = "Michael Prantner and Giampaolo Buticchi and Marco Liserre",

note = "Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe ; Conference date: 11-09-2017 Through 14-09-2017",

year = "2017",

month = nov,

day = "6",

doi = "10.23919/EPE17ECCEEurope.2017.8099213",

language = "English",

series = "2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe",

address = "United States",

}

Prantner, M, Buticchi, G & Liserre, M 2017, Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index. in 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe. 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe, Warsaw, Poland, 11/09/17. https://doi.org/10.23919/EPE17ECCEEurope.2017.8099213

Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index. / Prantner, Michael; Buticchi, Giampaolo; Liserre, Marco.
2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 2017. (2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe; Vol. 2017-January).

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index

AU - Prantner, Michael

AU - Buticchi, Giampaolo

AU - Liserre, Marco

PY - 2017/11/6

Y1 - 2017/11/6

N2 - Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter design. The results are condensed in a performance index, that allows comparing different solutions.

AB - Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter design. The results are condensed in a performance index, that allows comparing different solutions.

KW - Device characterisation

KW - Efficiency

KW - Gallium Nitride (GaN)

KW - Silicon Carbide (SiC)

KW - Wide bandgap devices

UR - http://www.scopus.com/inward/record.url?scp=85042147467&partnerID=8YFLogxK

U2 - 10.23919/EPE17ECCEEurope.2017.8099213

DO - 10.23919/EPE17ECCEEurope.2017.8099213

M3 - Conference contribution

AN - SCOPUS:85042147467

T3 - 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe

BT - 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe

Y2 - 11 September 2017 through 14 September 2017

ER -

Prantner M, Buticchi G, Liserre M. Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index. In 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe. Institute of Electrical and Electronics Engineers Inc. 2017. (2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe). doi: 10.23919/EPE17ECCEEurope.2017.8099213

Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index

Abstract

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Keywords

ASJC Scopus subject areas

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