TY - GEN
T1 - Gate driver for the active thermal control of a DC/DC GaN-based converter
AU - Prasobhu, Pramod Kumar
AU - Buticchi, Giampaolo
AU - Brueske, Stephan
AU - Liserre, Marco
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016
Y1 - 2016
N2 - Wide-Band-Gap power semiconductors based on SiC and GaN offer some significant advantages compared to Si-devices, in particular higher switching speed and higher operating temperature. These features offer potentially increased power density, which makes the temperature management critical especially for the PCB and components to which the GaN is connected. In this paper, an active gate driver with active thermal control is implemented and can be used to alter the losses of a DC/DC buck converter based on GaN transistors, with the aim of reducing the thermal cycling thus improving the converter's lifetime.
AB - Wide-Band-Gap power semiconductors based on SiC and GaN offer some significant advantages compared to Si-devices, in particular higher switching speed and higher operating temperature. These features offer potentially increased power density, which makes the temperature management critical especially for the PCB and components to which the GaN is connected. In this paper, an active gate driver with active thermal control is implemented and can be used to alter the losses of a DC/DC buck converter based on GaN transistors, with the aim of reducing the thermal cycling thus improving the converter's lifetime.
UR - http://www.scopus.com/inward/record.url?scp=85015369849&partnerID=8YFLogxK
U2 - 10.1109/ECCE.2016.7855131
DO - 10.1109/ECCE.2016.7855131
M3 - Conference contribution
AN - SCOPUS:85015369849
T3 - ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
BT - ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
Y2 - 18 September 2016 through 22 September 2016
ER -