TY - GEN
T1 - Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide
AU - Goel, Saurav
AU - Luo, Xichun
AU - Stukowski, Alexander
AU - Reuben, Robert L.
PY - 2012
Y1 - 2012
N2 - Silicon carbide (SiC) is a suitable candidate for MEMS, NEMS, optoelectronic and nanotribological applications e.g. airborne laser devices, laser radar systems, vacuum ultraviolet (VUV) telescopes and space based laser mirrors. In-depth understanding of the influence of coolant and crystal structure of the work material on the nanometric cutting process of SiC could help in cost saving operations. Therefore, nanoscratching trials were carried out on single crystal 6H-SiC involving four pre-selected coolants to emulate nanometric cutting. A specific coolant was found to improve the cutting conditions tremendously and hence recommended. Moreover, a molecular dynamics (MD) simulation model was developed to simulate nanometric cutting of polycrystalline (PC) 3C-SiC and single crystal (SC) 3C-SiC. Besides explaining the reasons for the ease of machinability of chemically vapour deposited (CVD) 3C-SiC compared to SC-3C-SiC, simulation results also explains why SC-SiC provides a better measure of attainable surface roughness in comparison to CVD-SiC and reaction bonded (RB)-SiC.
AB - Silicon carbide (SiC) is a suitable candidate for MEMS, NEMS, optoelectronic and nanotribological applications e.g. airborne laser devices, laser radar systems, vacuum ultraviolet (VUV) telescopes and space based laser mirrors. In-depth understanding of the influence of coolant and crystal structure of the work material on the nanometric cutting process of SiC could help in cost saving operations. Therefore, nanoscratching trials were carried out on single crystal 6H-SiC involving four pre-selected coolants to emulate nanometric cutting. A specific coolant was found to improve the cutting conditions tremendously and hence recommended. Moreover, a molecular dynamics (MD) simulation model was developed to simulate nanometric cutting of polycrystalline (PC) 3C-SiC and single crystal (SC) 3C-SiC. Besides explaining the reasons for the ease of machinability of chemically vapour deposited (CVD) 3C-SiC compared to SC-3C-SiC, simulation results also explains why SC-SiC provides a better measure of attainable surface roughness in comparison to CVD-SiC and reaction bonded (RB)-SiC.
UR - http://www.scopus.com/inward/record.url?scp=84896547118&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84896547118
T3 - Proceedings of the 12th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2012
SP - 299
EP - 302
BT - Proceedings of the 12th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2012
A2 - Spaan, H.
A2 - Burke, Theresa
A2 - Shore, Paul
PB - euspen
T2 - 12th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2012
Y2 - 4 June 2012 through 7 June 2012
ER -