Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme

Emre Gurpinar; Dipankar De; Alberto Castellazzi; Davide Barater; Giampaolo Buticchi; Giovanni Franceschini

doi:10.1109/COMPEL.2014.6877124

Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme

Emre Gurpinar, Dipankar De, Alberto Castellazzi, Davide Barater, Giampaolo Buticchi, Giovanni Franceschini

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

38 Citations (Scopus)

Abstract

Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFETs by ROHM is presented with a new switching pattern that utilises the active rectification capability of SiC devices. Performance analysis of the converter with 700V DC link and 230V_rmsgrid voltage are presented for different switching frequency, device case temperature and load conditions. The switching frequency is varied from 10kHz to 80kHz at four different output power and four different heat sink temperature conditions. The experimental results show that the converter can maintain high efficiency under wide load, frequency and heat sink temperature conditions. Robust performance of SiC devices can lead to reduction in passive component size, by utilizing high switching frequency and heat sink weight and volume by operating SiC at higher case temperature conditions.

Original language	English
Title of host publication	2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479921478
DOIs	https://doi.org/10.1109/COMPEL.2014.6877124
Publication status	Published - 1 Jan 2014
Externally published	Yes
Event	2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014 - Santander, Spain Duration: 22 Jun 2014 → 25 Jun 2014

Publication series

Name	2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014

Conference

Conference	2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014
Country/Territory	Spain
City	Santander
Period	22/06/14 → 25/06/14

Keywords

ANPC
Active Neutral Point Clamped Inverter
Renewable energy
SiC MOSFET
Single phase inverters
Transformerless PV inverter

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/COMPEL.2014.6877124

Cite this

Gurpinar, E., De, D., Castellazzi, A., Barater, D., Buticchi, G., & Franceschini, G. (2014). Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme. In 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014 Article 6877124 (2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014). IEEE Computer Society. https://doi.org/10.1109/COMPEL.2014.6877124

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title = "Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme",

abstract = "Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFETs by ROHM is presented with a new switching pattern that utilises the active rectification capability of SiC devices. Performance analysis of the converter with 700V DC link and 230Vrmsgrid voltage are presented for different switching frequency, device case temperature and load conditions. The switching frequency is varied from 10kHz to 80kHz at four different output power and four different heat sink temperature conditions. The experimental results show that the converter can maintain high efficiency under wide load, frequency and heat sink temperature conditions. Robust performance of SiC devices can lead to reduction in passive component size, by utilizing high switching frequency and heat sink weight and volume by operating SiC at higher case temperature conditions.",

keywords = "ANPC, Active Neutral Point Clamped Inverter, Renewable energy, SiC MOSFET, Single phase inverters, Transformerless PV inverter",

author = "Emre Gurpinar and Dipankar De and Alberto Castellazzi and Davide Barater and Giampaolo Buticchi and Giovanni Franceschini",

note = "Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014 ; Conference date: 22-06-2014 Through 25-06-2014",

year = "2014",

month = jan,

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doi = "10.1109/COMPEL.2014.6877124",

language = "English",

isbn = "9781479921478",

series = "2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014",

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Gurpinar, E, De, D, Castellazzi, A, Barater, D, Buticchi, G & Franceschini, G 2014, Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme. in 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014., 6877124, 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014, IEEE Computer Society, 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014, Santander, Spain, 22/06/14. https://doi.org/10.1109/COMPEL.2014.6877124

Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme. / Gurpinar, Emre; De, Dipankar; Castellazzi, Alberto et al.
2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014. IEEE Computer Society, 2014. 6877124 (2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014).

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme

AU - Gurpinar, Emre

AU - De, Dipankar

AU - Castellazzi, Alberto

AU - Barater, Davide

AU - Buticchi, Giampaolo

AU - Franceschini, Giovanni

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFETs by ROHM is presented with a new switching pattern that utilises the active rectification capability of SiC devices. Performance analysis of the converter with 700V DC link and 230Vrmsgrid voltage are presented for different switching frequency, device case temperature and load conditions. The switching frequency is varied from 10kHz to 80kHz at four different output power and four different heat sink temperature conditions. The experimental results show that the converter can maintain high efficiency under wide load, frequency and heat sink temperature conditions. Robust performance of SiC devices can lead to reduction in passive component size, by utilizing high switching frequency and heat sink weight and volume by operating SiC at higher case temperature conditions.

AB - Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFETs by ROHM is presented with a new switching pattern that utilises the active rectification capability of SiC devices. Performance analysis of the converter with 700V DC link and 230Vrmsgrid voltage are presented for different switching frequency, device case temperature and load conditions. The switching frequency is varied from 10kHz to 80kHz at four different output power and four different heat sink temperature conditions. The experimental results show that the converter can maintain high efficiency under wide load, frequency and heat sink temperature conditions. Robust performance of SiC devices can lead to reduction in passive component size, by utilizing high switching frequency and heat sink weight and volume by operating SiC at higher case temperature conditions.

KW - ANPC

KW - Active Neutral Point Clamped Inverter

KW - Renewable energy

KW - SiC MOSFET

KW - Single phase inverters

KW - Transformerless PV inverter

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M3 - Conference contribution

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SN - 9781479921478

T3 - 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014

BT - 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014

PB - IEEE Computer Society

T2 - 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014

Y2 - 22 June 2014 through 25 June 2014

ER -

Gurpinar E, De D, Castellazzi A, Barater D, Buticchi G, Franceschini G. Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme. In 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014. IEEE Computer Society. 2014. 6877124. (2014 IEEE 15th Workshop on Control and Modeling for Power Electronics, COMPEL 2014). doi: 10.1109/COMPEL.2014.6877124

Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme

Abstract

Publication series

Conference

Keywords

UN SDGs

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