Abstract
The energy of low-temperature synthesis of graphene on the surface of nanoporous silicon (nc-PS) is considered. It was shown that the energy of low-temperature synthesis of graphene on nc-PS is due to the excess energies of the nanocrystal surface, the interfaces of the nanocrystal nc-Si/c-Si monocrystal matrix, and the free dangling bonds of silicon atoms of nanoscale silicon grains in the skeleton of porous silicon. This opens up a new perspective for the development of methods for the low-temperature synthesis of graphene without metal catalysts for the decomposition of carbon precursors, including the use of the ALD (atomic layer deposition) method.
Original language | English |
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Article number | 013009 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 10 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2021 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials