TY - GEN
T1 - Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon
AU - Goel, Saurav
AU - Luo, Xichun
AU - Reuben, R. L.
AU - Rashid, W. B.
AU - Sun, Jining
PY - 2012
Y1 - 2012
N2 - Wear of diamond tool has always been a limiting factor in ductile regime machining of large size silicon components. In order to understand the tool wear phenomena, it is non-trivial to know the process outputs especially cutting forces, stresses and temperature during nanometric turning. In this paper, a realistic potential energy function has been deployed through molecular dynamic (MD) simulation, to simulate the process outputs of single diamond turning operation against single crystal silicon. The simulation result suggests that wear mechanism of diamond tool is fundamentally governed by these process parameters and thus critical.
AB - Wear of diamond tool has always been a limiting factor in ductile regime machining of large size silicon components. In order to understand the tool wear phenomena, it is non-trivial to know the process outputs especially cutting forces, stresses and temperature during nanometric turning. In this paper, a realistic potential energy function has been deployed through molecular dynamic (MD) simulation, to simulate the process outputs of single diamond turning operation against single crystal silicon. The simulation result suggests that wear mechanism of diamond tool is fundamentally governed by these process parameters and thus critical.
KW - MD simulations
KW - Single crystal silicon
KW - Single point diamond turning
UR - http://www.scopus.com/inward/record.url?scp=84862926277&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.496.223
DO - 10.4028/www.scientific.net/KEM.496.223
M3 - Conference contribution
AN - SCOPUS:84862926277
SN - 9783037852972
T3 - Key Engineering Materials
SP - 223
EP - 228
BT - Precision Machining VI
PB - Trans Tech Publications Ltd
T2 - 6th International Congress of Precision Machining, ICPM2011
Y2 - 13 September 2011 through 15 September 2011
ER -