@inproceedings{f03e4b233e2d49f095545b004a1336e0,
title = "Top-gated carbon nanotube FETs from quantum simulations: Comparison with experiments",
abstract = "We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function (NEGF) quantum transport method coupled with a k→ ·p→ description of the electronic structure is demonstrated to achieve excellent agreement with the reported experimental data. Factors influencing the electrostatic control of the channel are investigated and reveal that detailed modeling of the electrostatics and the electronic band structure of the CNT is required to achieve quantitative agreement with experiment.",
author = "A. Sanchez-Soares and T. Kelly and G. Fagas and Greer, {J. C.} and E. Chen",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 ; Conference date: 19-04-2021 Through 22-04-2021",
year = "2021",
month = apr,
day = "19",
doi = "10.1109/VLSI-TSA51926.2021.9440104",
language = "English",
series = "VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings",
address = "United States",
}