Numerical analysis of an inline metal-organic chemical vapour deposition process based on sliding-mesh modelling

Keyphrases

• 2D Modeling 33%
• 3D Modeling 33%
• Baffle Plate 33%
• Cadmium Telluride Films 33%
• Chemical Vapor Deposition Processes 100%
• Computational Fluid Dynamics Modeling 33%
• Computational Grid 33%
• Deposition Process 33%
• Film Uniformity 33%
• Flow Behavior 33%
• Grid Sensitivity 33%
• Hexahedral Cells 33%
• Mesh Model 100%
• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Moving Speed 100%
• Numerical Analysis 100%
• Process-based 100%
• Reactor 33%
• Real-time Dynamics 33%
• Sampling Time Interval 33%
• Sensitivity Test 33%
• Sliding Mesh 100%
• Sliding Mesh Method 33%
• Species Concentration 33%
• Species Distribution 33%
• Susceptor 66%
• Temperature Distribution 33%
• Temperature Field 33%
• Temperature Range 33%
• Test Validity 33%
• Transport Phenomena 33%
• Velocity Field 33%

Engineering

• Baffle Plate 33%
• Computational Fluid Dynamic Modeling 33%
• Computational Grid 33%
• Deposited Mass 33%
• Deposition Process 100%
• Film Uniformity 33%
• Flow Behavior 33%
• Good Agreement 33%
• Main Purpose 33%
• Metal Organic Chemical Vapor Deposition 100%
• Sampling Time 33%
• Sensitivity Analysis 33%
• Sliding Mesh 100%
• Susceptor 66%
• Temperature Distribution 33%
• Temperature Field 33%
• Temperature Range 33%
• Thin Films 66%
• Transport Phenomena 33%
• Velocity Field 33%

Material Science

• Cadmium 50%
• Computational Fluid Dynamics 50%
• Metal-Organic Chemical Vapor Deposition 100%
• Thin Films 100%
• Transport Phenomena 50%
• Vapor Phase Deposition 100%